The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Dec. 13, 2022
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
The disclosed subject matter relates generally to structures for use in memory devices. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having source, drain, and control electrodes. The present disclosure provides a memory structure including a source electrode, a drain electrode, a control electrode laterally between the source electrode and the drain electrode, a hole generating layer above the control electrode, a dielectric channel layer above the hole generating layer, the dielectric channel layer contacts the source electrode and the drain electrode, a first spacer layer on a first side of the control electrode, and a second spacer layer on a second side of the control electrode. The first spacer layer and the second spacer layer isolate the source electrode and the drain electrode from the control electrode and the hole generating layer.