The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jan. 30, 2024
Micron Technology, Inc., Boise, ID (US);
Kyungjin Kim, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A system and method for detecting a failure of a set of memory cells in a memory device, determining a recovery indicator associated the failure, the recovery indicator corresponding to a subset of cells of the set of memory cells, and the subset of cells having a threshold voltage above a read level, where the read level corresponds to a per-cell memory density of the plurality of cells of the memory device, determining a data recovery operation based on whether the recovery indicator satisfies a threshold condition, the threshold condition corresponding to the read level, and causing the data recovery operation to be performed on the set of memory cells.