The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Dec. 13, 2017
Applicant:
Picosun Oy, Espoo, FI;
Inventors:
Vaino Kilpi, Espoo, FI;
Wei-Min Li, Espoo, FI;
Timo Malinen, Espoo, FI;
Juhana Kostamo, Espoo, FI;
Sven Lindfors, Espoo, FI;
Assignee:
Picosun Oy, Espoo, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05C 5/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B05C 5/001 (2013.01); C23C 16/403 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/45582 (2013.01); C23C 16/52 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32743 (2013.01); H01J 37/32871 (2013.01); H01L 21/02274 (2013.01);
Abstract
The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.