The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
May. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chung-Liang Cheng, Changhua County, TW;
Yen-Yu Chen, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/00 (2025.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 62/021 (2025.01); H01L 21/28518 (2013.01); H01L 21/76224 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6212 (2025.01); H10D 62/116 (2025.01); H10D 64/015 (2025.01); H10D 64/514 (2025.01);
Abstract
A semiconductor device includes a first cobalt-containing plug disposed over a substrate, a second cobalt-containing plug disposed over the first cobalt-containing plug, a first barrier layer over sidewalls of the second cobalt-containing plug, a second barrier layer over sidewalls of the first barrier layer, and a dielectric layer surrounding the second barrier layer. The first barrier layer contains a metal element. The first and second barrier layers include different material compositions.