The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Jun. 21, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Hang-Ting Lue, Hsinchu, TW;

Teng Hao Yeh, Hsinchu County, TW;

Cheng-Yu Lee, Taoyuan, TW;

Wei-Chen Chen, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/535 (2006.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/535 (2013.01); H10B 43/40 (2023.02);
Abstract

A three-dimensional flash memory device may be a AND flash memory device. The three-dimensional flash memory device includes: a substrate, a gate stack structure, a plurality of slit structures, a plurality of memory arrays, and a plurality of conductive pillars. The gate stack structure is located above the substrate. The plurality of slit structures extend through the gate stack structure and divide the gate stack structure into a plurality of blocks. The plurality of memory arrays are disposed in the gate stack structure of the plurality of blocks. The plurality of conductive pillars extends through the gate stack structure in the plurality of blocks, and disposed between the plurality of memory arrays and between the plurality of slit structures.


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