The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Apr. 26, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Frank Speetjens, Boise, ID (US);
Yucheng Wang, Boise, ID (US);
Brendan Flynn, Boise, ID (US);
S M Istiaque Hossain, Boise, ID (US);
Tom J. John, Boise, ID (US);
Jeremy Adams, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02);
Abstract
A microelectronic device includes tiers of alternating dielectric and conductive materials, a cap oxide material vertically adjacent to the tiers, and pillars extending vertically through the tiers. The cap oxide material is formulated to exhibit a different etch rate relative to an etch rate of the oxide material of the tiers. Additional microelectronic devices, microelectronic systems, and methods of forming a microelectronic device are also disclosed.