The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jul. 03, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Jen-Yuan Chang, Hsinchu, TW;
Tzu-Chung Tsai, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/20 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 21/56 (2013.01); H01L 23/20 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 23/291 (2013.01); H01L 24/32 (2013.01); H01L 2224/32145 (2013.01);
Abstract
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.