The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Sep. 26, 2023
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

John C. Valcore, Jr., Worthington, OH (US);

Bradford J. Lyndaker, Lowville, NY (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B44C 1/22 (2006.01); H01J 37/32 (2006.01); H03L 5/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); B44C 1/22 (2013.01); H01J 37/32165 (2013.01); H01J 37/32935 (2013.01); H03L 5/00 (2013.01); H05H 2242/26 (2021.05);
Abstract

Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.


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