The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Sep. 28, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Masaru Yano, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06N 3/065 (2023.01); G06N 3/08 (2023.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G06N 3/065 (2023.01); G06N 3/08 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 16/04 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract

A semiconductor memory device has a NOR-type memory cell array, a crossbar array, an entry gate, and a column selecting/signal processing unit. The crossbar array has a plurality of rows and columns, variable resistor elements formed in intersections of rows and columns respectively. The entry gate arranged between the memory cell array and the crossbar array, connects a selected bit line of the memory cell array to the crossbar array based on a selection signal. The column selecting/signal processing unit has a column writing unit, a column reading unit, and a NOR writing unit. The column writing unit writes data read from the memory cell array to a selected column of the crossbar array. The column reading unit reads data of the selected column of the crossbar array. The NOR writing unit at least writes data read by the column writing unit to the memory cell array.


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