The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Mar. 29, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Shih-Lien Linus Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/56 (2013.01); G11C 7/1069 (2013.01); G11C 7/1096 (2013.01);
Abstract

Disclosed herein are related to a memory system and a method of operating the memory system. In one aspect, resistances of a first memory cell, a second memory cell, a third memory cell, and a fourth memory cell are individually set. In one aspect, the first memory cell and the second memory cell are coupled to each other in series between a first line and a second line, and the third memory cell and the fourth memory cell are coupled to each other in series between the second line and a third line. In one aspect, current through the second line according to a parallel resistance of i) a first series resistance of the first memory cell and the second memory cell, and ii) a second series resistance of the third memory cell and the fourth memory cell is sensed. According to the sensed current, multi-level data can be read.


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