The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Dec. 11, 2023
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zaiyuan Ren, Boise, ID (US);
Thomas Gehrke, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/811 (2025.01); H10H 20/01 (2025.01); H10H 20/817 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/811 (2025.01); H10H 20/0137 (2025.01); H10H 20/817 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01);
Abstract
Light emitting diodes ('LEDs') with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.