The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Aug. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kun-Huei Lin, Tainan, TW;

Yun-Wei Cheng, Taipei, TW;

Chun-Hao Chou, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Cheng Yuan Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01); G02B 5/20 (2006.01);
U.S. Cl.
CPC ...
H10F 39/8067 (2025.01); H10F 39/024 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/809 (2025.01); G02B 5/20 (2013.01);
Abstract

A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.


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