The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Aug. 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan-Ting Pan, Taipei, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Shi-Ning Ju, Hsinchu, TW;
Yi-Ruei Jhan, Keelung, TW;
Wei-Ting Wang, Taipei, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor structure is provided. The method includes forming a fin structure protruding from a substrate, wherein the fin structure includes first semiconductor material layers and second semiconductor material layers alternately stacked. The method includes forming a dummy gate structure across the fin structure. The method includes forming a gate spacer on the sidewall of the dummy gate structure. The method includes removing the dummy gate structure to expose the fin structure. The method includes partially removing the second semiconductor material layers to form concave portions on sidewalls of the second semiconductor material layers. The method includes forming dielectric spacers in the concave portions. The method includes removing the first semiconductor material layers to form gaps. The method includes forming a gate structure in the gaps to wrap around the second semiconductor material layers and the dielectric spacers.