The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 16, 2022
Leap Semiconductor Corp., Taoyuan, TW;
Wei-Fan Chen, Taichung, TW;
Kuo-Chi Tsai, Taoyuan, TW;
LEAP Semiconductor Corp., Taoyuan, TW;
Abstract
A semiconductor power device includes a substrate, a drift layer disposed on the substrate, buried doped regions, gates, a gate insulation layer, well regions, source regions, and well contact regions. The buried doped regions are in the drift layer and parallel to each other, and each of the buried doped regions is a predetermined distance from an upper surface of the drift layer. The gates are on the drift layer and directly above the buried doped regions. The gate insulation layer is between the drift layer and the gates. The well regions are in the drift layer between the gates and separated from the buried doped regions, wherein the well regions and the buried doped regions are electrically connected. The source regions are within the well regions between the gates, and each of the well contact regions passes through the source region and contacts with the well.