The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Chia-En Huang, Xinfeng, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device, comprises a source structure comprising an active source portion, an inactive source portion spaced apart from the active source portion in a vertical direction, and a first dielectric structure interposed between the active source portion and the inactive source portion. A drain structure is spaced apart from the source structure in a first direction. A channel layer is disposed on outer surfaces of the source and the drain structures. A memory layer is disposed on an outer surface of the channel layer so as to wrap around the channel layer. At least one gate layer is in electrical communication with the active source portion.