The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 27, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Tung Yeh, Taoyuan, TW;
Ming-Chang Lu, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/47 (2025.01); H10D 62/8503 (2025.01);
Abstract
A high electron mobility transistor includes a substrate. A first III-V compound layer is disposed on the substrate. A second III-V compound layer is embedded within the first III-V compound layer. A P-type gallium nitride gate is embedded within the second Ill-V compound layer. A gate electrode is disposed on the second III-V compound layer and contacts the P-type gallium nitride gate. A source electrode is disposed at one side of the gate electrode. A drain electrode is disposed at another side of the gate electrode.