The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jan. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Peng-Chun Liou, Tainan, TW;
Zhiqiang Wu, Hsinchu County, TW;
Chung-Wei Wu, Hsin-Chu County, TW;
Ya-Yun Cheng, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A ferroelectric memory device includes a multi-layer stack, a ferroelectric layer, and channel layers. The multi-layer stack is disposed on a substrate and includes conductive layers and dielectric layers stacked alternately. The ferroelectric layer has a curvy profile and is disposed along sidewalls of the conducive layers and sidewalls of the dielectric layers. The channel layers are separated from each other and disposed on the ferroelectric layer, and correspond to the conductive layers respectively.