The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 02, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Runping Wu, Hefei, CN;
Jun Zhang, Hefei, CN;
Taegyun Kim, Hefei, CN;
Daejoong Won, Hefei, CN;
Soonbyung Park, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H10B 12/053 (2023.02); H10B 12/488 (2023.02); H01L 21/32133 (2013.01);
Abstract
A method for manufacturing a semiconductor structure includes: forming multiple trenches spaced apart from each other and extending in a first direction in a substrate, and forming a first insulating layer on sidewalls and bottoms of the trenches; forming a first conductive layer on a surface of the first insulating layer; removing part of the first conductive layer to an initial depth by a first etching process; removing remaining part of the first conductive layer to a target depth by a second etching process.