The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Aug. 06, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuan-Wei Huang, Taoyuan, TW;
Yu-Yu Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A patterning process that can be utilized in order to help form conductive lines within a dielectric layer of a metallization layer is provided. In an embodiment a first interfacial layer is patterned a first time, the first interfacial layer being located over a first hard mask layer over a dielectric layer, the patterning the first interfacial layer the first time forming a first opening, which is filled with a first dielectric material. The first interfacial layer is patterned a second time, the patterning the first interfacial layer the second time forming second openings in the first interfacial layer, at least one of the second openings exposing the first dielectric material. The first dielectric material is removed, and the dielectric layer is patterned a second time after the removing the first dielectric material using the first interfacial layer as a mask, the patterning the dielectric layer extending the second openings.