The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Feb. 12, 2024
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Shoma Miyata, Toyama, JP;

Kimihiko Nakatani, Toyama, JP;

Takayuki Waseda, Toyama, JP;

Takashi Nakagawa, Toyama, JP;

Motomu Degai, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/042 (2013.01); C23C 16/45529 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/28562 (2013.01);
Abstract

A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.


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