The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jul. 14, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Hsiang Chen, Hsinchu, TW;

Ching-Horng Chen, Hsinchu County, TW;

Yen-Ji Chen, Hsinchu, TW;

Cheng-Yi Huang, Hsinchu, TW;

Chih-Shen Yang, Yunlin County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H05K 9/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32651 (2013.01); H01J 37/321 (2013.01); H01J 37/3211 (2013.01); H01L 21/67069 (2013.01); H05K 9/0049 (2013.01); H01J 2237/334 (2013.01);
Abstract

A Faraday shield, a semiconductor processing apparatus, and an etching apparatus are provided. The Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of conductive slices from one another. The conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield. A coil is wound around the circumference of the Faraday shield.


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