The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jan. 04, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Chao-I Wu, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 16/3404 (2013.01);
Abstract
An integrated chip including a substrate. A gate layer is over the substrate. A channel layer is over the substrate and vertically spaced apart from the gate layer. A ferroelectric layer is directly between the channel layer and the gate layer. A pair of source/drain electrodes are laterally spaced apart over the channel layer. A plurality of charge traps are along an interface between the ferroelectric layer and the channel layer.