The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Aug. 20, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu, TW;

Chia-En Huang, Xinfeng, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/10 (2023.01); G11C 7/18 (2006.01); G11C 16/04 (2006.01); H10B 41/20 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 7/18 (2013.01); H10B 41/10 (2023.02); H10B 41/20 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02);
Abstract

A memory device includes a first memory cell. The first memory cell includes: a first conductor structure extending along a lateral direction; a first memory film comprising a first portion wrapping around a first portion of the first conductor structure; and a first semiconductor film wrapping around the first portion of the first memory film. A second conductor structure extends along a vertical direction and is coupled to a first end portion of the first semiconductor film along the lateral direction. A third conductor structure extends along the vertical direction and is coupled to a second end portion of the first semiconductor film along the lateral direction.


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