The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jul. 25, 2023
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Yanzhen Wang, Fremont, CA (US);

Mahdi Ganji, San Jose, CA (US);

Yanjie Wang, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/406 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 11/40615 (2013.01); G11C 11/4076 (2013.01);
Abstract

Systems and methods for effecting a temperature dependent refresh read rate of a read operation of a block or sub-block of memory cells in a NAND string. The method includes initiating a refresh read cycle, determining a current temperature of the non-volatile memory device, and determining a refresh read rate corresponding to the current temperature. The refresh read is performed. The method further includes implementing a delay of a defined time period after the refresh read is performed, wherein the defined time period is based on the determined refresh read rate. If a new command is received before the delay has ended then the new command is performed, and if the delay has ended without a new command having been received then the method returns to the step of determining the current temperature.


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