The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Sep. 16, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hsueh-Chung Chen, Cohoes, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Chanro Park, Clifton Park, NY (US);

Yann Mignot, Slingerlands, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

A semiconductor device is provided. The semiconductor device includes a memory including a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and an upper electrode on the MTJ stack. The semiconductor device also includes at least one dielectric layer formed around the memory, wherein a top metal layer contact hole is formed in the at least one dielectric layer, a dielectric liner layer formed in the top metal contact hole, and a top metal layer contact in the top metal layer contact hole.


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