The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Sep. 20, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuan-Ting Pan, Hsinchu, TW;

Kuo-Cheng Chiang, Hsinchu, TW;

Shi Ning Ju, Hsinchu, TW;

Yi-Ruei Jhan, Hsinchu, TW;

Yen-Ming Chen, Hsinchu, TW;

Chih-Hao Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/118 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 84/013 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract

A device includes a substrate, a first semiconductor fin over the substrate extending in a first lateral direction, a first vertical stack of semiconductor nanosheets over the substrate extending in the first lateral direction, and an inactive fin between the first semiconductor fin and the first vertical stack extending in the first lateral direction. A first gate structure surrounds and covers the first semiconductor fin, and extends in a second lateral direction substantially perpendicular to the first lateral direction. A second gate structure surrounds and covers the first vertical stack, and extends in the second lateral direction.


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