The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Jun. 21, 2022
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Chao Chen, Shanghai, CN;

Zhouyi Luo, Shanghai, CN;

Feng Cong, Shanghai, CN;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/66 (2025.01); H03F 3/45 (2006.01); H10D 1/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/66 (2025.01); H03F 3/45475 (2013.01); H10D 1/047 (2025.01);
Abstract

A MIS capacitor and a method of making the same. The capacitor includes a semiconductor substrate having a first part having a first conductivity type and contact regions for coupling the first part to an output node. The substrate has dielectric on a surface of the first part and electrodes on the dielectric. The substrate has a second part having a second conductivity type and a third part having the first conductivity type. The third part is coupleable to a supply voltage. The second part is located between the first part and the third part. The first part and the second part form a first p-n junction and the second part and the third part form a second p-n junction. A reference contact is provided for coupling the second part to a reference voltage. A further contact region is provided for coupling the second part to the output node.


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