The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jun. 03, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Mao-Nan Wang, Kaohsiung, TW;
Yuan-Yang Hsiao, Taipei, TW;
Chen-Chiu Huang, Taichung, TW;
Dian-Hau Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Passive devices are provided. In an embodiment, a passive device includes a substrate comprising a first region and a second region, a first lower contact feature and a second lower contact feature in a dielectric layer and directly over the first region and the second region, respectively, a first vertical stack of conductive features disposed over the first region, a metal-insulator-metal (MIM) capacitor disposed over the second region and comprising a vertical stack of conductor plates, a first contact via extending through the first vertical stack of conductive features and electrically coupled to the first lower contact feature, and a second contact via extending through a portion of the vertical stack of conductor plates and electrically coupled to the second lower contact feature. A number of conductive features penetrated by the first contact via is different than a number of conductor plates penetrated by the second contact via.