The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jan. 13, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/02 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49816 (2013.01); H01L 21/02288 (2013.01); H01L 21/4853 (2013.01); H01L 23/3128 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 21/563 (2013.01); H01L 23/49827 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/0655 (2013.01); H01L 25/16 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/97 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes following operations. A substrate is received. An electrical conductor is formed over a surface of the substrate. A photo-curable material is selectively dispensed over the surface of the substrate. The photo-curable material is irradiated to form a passivation layer is formed over the surface of the substrate. The passivation layer partially covers an edge of the electrical conductor.