The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Feb. 18, 2021
Lam Research Corporation, Fremont, CA (US);
Bhadri N. Varadarajan, Beaverton, OR (US);
Ieva Narkeviciute, Portland, OR (US);
Kashish Sharma, Tigard, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Graphene is deposited on a metal surface of a semiconductor substrate at a deposition temperature compatible with back-end-of-line semiconductor processing. The graphene may be annealed at a temperature between the deposition temperature and a temperature sensitive limit of materials in the semiconductor substrate to improve film quality. Alternatively, the graphene may be treated by exposure to plasma with one or more oxidant species. The graphene may be encapsulated with an etch stop layer and hermetic barrier, where the etch stop layer includes a metal oxide deposited under conditions that do not change or that improve the film quality of the graphene. The graphene may be encapsulated with a hermetic barrier, where the hermetic barrier is deposited under conditions that do not damage the graphene.