The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jul. 20, 2021
Infineon Technologies Austria Ag, Villach, AT;
Christian Fachmann, Fürnitz, AT;
Barbara Angela Glanzer, Klagenfurt, AT;
Andreas Riegler, Lichtpold, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of patterns of metal structures in a dielectric inorganic substrate wafer. The metal structures are accommodated in recesses of the dielectric inorganic substrate wafer and at least partly connect through the dielectric inorganic substrate. The method further includes providing a semiconductor wafer comprising a front side and a backside, wherein a plurality of electrodes is disposed on the front side of the semiconductor wafer. The front side of the semiconductor wafer is bonded to the dielectric inorganic substrate wafer to form a composite wafer, wherein the plurality of patterns of metal structures is connected to the plurality of electrodes. The composite wafer is separated into composite chips.