The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Aug. 04, 2023
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Yingying Zhu, Shanghai, CN;

Chao Xu, Shanghai, CN;

Ming Wang, Shanghai, CN;

Liang Li, Shanghai, CN;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/102 (2013.01); G11C 16/28 (2013.01); G11C 16/3404 (2013.01); G11C 16/3486 (2013.01);
Abstract

Technology is disclosed herein for simultaneous lower tail program verify with upper tail verify. The memory system may apply a reference voltage to a word line following applying a program voltage to the word line. The memory system senses the first set of memory cells targeted for a first data state and the second set of memory cells targeted for a second data state. The memory system determines whether memory cells in the first set have a Vt greater than a maximum target Vt for the first data state based on the sensing of the first set of memory cells. The memory system also determines whether memory cells in the second set have a Vt less than a minimum target Vt for the second data state based on the sensing of the second set of memory cells.


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