The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Jul. 19, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Innocenzo Tortorelli, Cernusco Sul Naviglio, IT;

Mattia Robustelli, Milan, IT;

Alessandro Sebastiani, Piacenza, IT;

Matteo Impala′, Milan, IT;

Fabio Pellizzer, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/20 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 13/0069 (2013.01); G11C 16/0425 (2013.01); G11C 16/20 (2013.01);
Abstract

Systems, methods, and apparatuses are provided for unipolar programming of memory cells in a semiconductor device. A memory has a plurality of self-selecting memory cells and circuitry configured to program a self-selecting memory cell of the plurality of self-selecting memory cells to a first data state or a second data state by applying a current pulse to the self-selecting memory cell. The current is a set pulse or a reset pulse. The set pulse and the reset pulse have a same polarity.


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