The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jul. 08, 2022
Epistar Corporation, Hsinchu, TW;
Chun-Yu Lin, Hsinchu, TW;
Jun-Yi Li, Hsinchu, TW;
Yi-Yang Chiu, Hsinchu, TW;
Chun-Wei Chang, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Chang-Hsiu Wu, Hsinchu, TW;
Wen-Luh Liao, Hsinchu, TW;
Chen Ou, Hsinchu, TW;
Wei-Wun Jheng, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.