The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jun. 23, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joshua M. Rubin, Albany, NY (US);

Chen Zhang, Guilderland, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Brent A Anderson, Jericho, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 30/031 (2025.01); H10D 30/6728 (2025.01); H10D 30/6729 (2025.01); H10D 64/62 (2025.01); H10D 84/0186 (2025.01); H10D 84/0195 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01);
Abstract

A plurality of transistor components, a system, and a method of forming a vertically stacked transistor structure within a wafer. The plurality of transistor components may include a first bottom transistor, where the first bottom transistor includes a channel, a gate, a source, and a drain. The plurality of transistor components may also include a first contact on top of the first bottom transistor, where the first contact is proximately connected to the first bottom transistor. The plurality of transistor components may also include a first set of stacked transistors, where the first set of stacked transistors includes a second top transistor on top of a second bottom transistor.


Find Patent Forward Citations

Loading…