The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Apr. 29, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chang-Miao Liu, Hsinchu, TW;
Wei-Lun Min, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0243 (2025.01); H10D 30/6211 (2025.01); H10D 64/018 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract
A semiconductor device includes a substrate, two source/drain features disposed on the substrate, a stack of channel layers disposed over the substrate and between the two source/drain features, and a gate structure disposed over and wrapping around the stack of channel layers. Each channel layer of the stack of channel layers has a dog-bone shape in a cross-sectional view including the two source/drain features and the stack of channel layers. The gate structure includes a seam.