The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

May. 04, 2022
Applicants:

Stmicroelectronics France, Montrouge, FR;

Stmicroelectronics International N.v., Geneva, CH;

Inventors:

Matthieu Nongaillard, Grenoble, FR;

Thomas Oheix, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 25/07 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H01L 25/074 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract

The disclosure concerns an electronic device comprising, stacked from a first surface to a second surface, a first stack and a second stack of two high electron mobility transistors, referred to as first and second transistor, the first and the second stack each comprising, from an insulating layer, interposed between the first and the second stack, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first and a second set of electrodes, the first and the second set of electrodes being each provided with a source electrode, with a drain electrode, and with a gate electrode which are arranged so that the first and the second transistor form a half-arm of a bridge.


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