The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Apr. 09, 2024
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Te-An Chen, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a Schottky barrier diode includes: forming a first well region and a second well region adjacent to the first well region in a substrate; depositing a first dielectric layer over the first well region and the second well region; performing a first patterning operation on the first dielectric layer to cause the first dielectric layer to include a stepped shape; performing a second patterning operation on the first dielectric layer to form a gate dielectric layer of a first transistor device in the second well region; and forming a conductive layer over the first well region to obtain a Schottky barrier interface.