The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jan. 21, 2022
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Desmond Jia Jun Loy, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Sriram Balasubramanian, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Structures for a non-volatile memory and methods of forming such structures. A gate electrode and a gate dielectric layer are formed over an active region with the gate dielectric layer between the gate electrode and the active region. A first doped region is formed in the active region, a second doped region is formed in the active region, and a source line is coupled to the second doped region. The first doped region is positioned in the active region at least in part beneath the gate dielectric layer, and the second doped region is positioned in the active region adjacent to the first doped region. The first doped region has a first conductivity type, and the second doped region has a second conductivity type opposite to the first conductivity type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile