The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Oct. 13, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10B 12/05 (2023.02); H01L 21/02071 (2013.01); H01L 21/31055 (2013.01); H01L 21/32138 (2013.01); H01L 21/32139 (2013.01); H01L 21/76224 (2013.01); H01L 21/76895 (2013.01); H10B 12/485 (2023.02); H01L 21/76811 (2013.01);
Abstract
The present application relates to the technical field of manufacturing semiconductor, and in particular to a method of manufacturing semiconductor structure and a semiconductor structure. The method of manufacturing semiconductor structure includes: forming a conductive layer on a substrate, and removing part of the conductive layer to form a contact structure composed of a plurality of contact pads; where each of the contact pads is electrically connected to a transistor structure on the substrate; and, after the contact pads are formed, removing residual core on top ends of the contact pads away from the substrate by dry etching.