The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jan. 08, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

James S. Rehmeyer, Boise, ID (US);

Christopher G. Wieduwilt, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/467 (2006.01); H01L 25/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/467 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2225/1094 (2013.01);
Abstract

An improved memory module and methods for constructing the same are disclosed herein. The memory module includes a substrate having a first surface and a second surface opposite the first surface, each having a central portion, a first array area and a second array area. The first array area is cooler than the second array area during operation. The memory module also includes a power management integrated circuit attached to the central portion of the first surface. The memory module also includes a first semiconductor die attached to the substrate in the first array area. The first semiconductor die has a first performance rating of an operating parameter at high temperatures. The memory module also includes a second semiconductor die attached to the substrate in the second array area. The second semiconductor die has a second performance rating of an operating parameter better than the first performance rating at high temperatures.


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