The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Dec. 05, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Cheng Ching, Hsinchu County, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Keng-Chu Lin, Pingtung County, TW;
Shi-Ning Ju, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a semiconductor fin, a doped dielectric fin, a shallow trench isolation (STI) oxide, a gate structure, and source/drain regions. The semiconductor fin upwardly extends from a substrate. The doped dielectric fin upwardly extends above the substrate. The doped dielectric fin is implanted with an impurity therein. The STI oxide laterally surrounds a lower portion of the semiconductor fin and a lower portion of the doped dielectric fin. The gate structure extends across the semiconductor fin and the doped dielectric fin. The source/drain regions are on the semiconductor fin and at opposite sides of the gate structure.