The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jul. 20, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Yexiao Yu, Hefei, CN;
Zhongming Liu, Hefei, CN;
Xinman Cao, Hefei, CN;
Jia Fang, Hefei, CN;
Jiayun Zhang, Hefei, CN;
Assignee:
CHANGXI MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3083 (2013.01); H01L 21/76877 (2013.01); H10B 12/482 (2023.02);
Abstract
A method for manufacturing a semiconductor structure includes: providing a substrate, a first mask and a second mask, etching the substrate by respectively using the first mask and the second mask, so as to form first grooves and second grooves on the substrate, wherein regions, in the substrate, where the first grooves and the second grooves are located form bit line grooves; and forming a conductive layer in each of the bit line grooves.