The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

May. 21, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ching-Hung Kao, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/28 (2006.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28158 (2013.01); H01L 21/76202 (2013.01); H10D 62/115 (2025.01); H10D 64/511 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device includes: a recess along a top surface of a semiconductor substrate, the recess having a first sidewall and a second sidewall laterally opposite each other; a nitride-based spacer layer extending along the first sidewall of the recess; and a field oxide layer in the recess extending along a bottom surface of the recess. The second sidewall is defined by a shallow trench isolation structure extending into the semiconductor substrate. A lateral tip of the field oxide layer is blocked by the nitride-based spacer layer from laterally extending beyond the first sidewall into the semiconductor substrate.


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