The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12362018 B1

Date of Patent:

Jul. 15, 2025

Filed:

Aug. 21, 2023

Method of programming memory

Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Ya-Jui Lee, Taichung, TW;

Assignee:

MACRONIX International Co., Ltd., Hsinchu, TW;

Attorney:

J.C. PATENTS

Primary Examiner:

Jason Lappas

Int. Cl.

CPC ...

G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);

U.S. Cl.

CPC ...

G11C 16/10 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); G11C 16/0483 (2013.01);

Abstract

A method of programming a memory includes performing a plurality of programming shots is provided. Each programming shot includes a pre-charge stage and a programming stage and includes the following steps. Applying a common source line voltage to a common source line or applying a bit line voltage to a bit line in the pre-charge stage, wherein the common source line voltage or the bit line voltage is applied by using incremental-step-pulse programming (ISSP) in the plurality of pre-charge stages. Applying a programming voltage to a selected word line in the programming stage, wherein the programming voltage is applied by using ISSP in the plurality of programming stages.

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