The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Dec. 23, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Karthik Sarpatwari, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 11/4074 (2006.01); G11C 11/4096 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 11/4074 (2013.01); G11C 11/4096 (2013.01); H10B 12/01 (2023.02); H10B 12/20 (2023.02);
Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first data line, a second data line, a conductive line, and a memory cell coupled to the first and second data lines. The memory cell includes a first transistor and a second transistor. The first transistor includes a first region electrically coupled to the first and second data lines, and charge storage structure electrically separated from the first region. The second transistor includes a second region electrically separated from the first region, the second region electrically coupled to the charge storage structure and the second data line. The conductive line is electrically separated from the first and second channel regions. Part of the conductive line is spanning across part of the first region of the first transistor and part of the second region of the second transistor.


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