The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Sep. 21, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Fanya Bi, Hubei, CN;

Xing Wang, Hubei, CN;

Hua Tan, Hubei, CN;

Zhe Sun, Hubei, CN;

Bo Yu, Hubei, CN;

Guangyao Han, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/10 (2016.01); G06F 12/0873 (2016.01); G06F 12/1018 (2016.01);
U.S. Cl.
CPC ...
G06F 12/1018 (2013.01); G06F 12/0873 (2013.01);
Abstract

An example memory controller and readable storage medium are disclosed. An example memory system includes: a non-volatile memory device and a memory controller coupled to the non-volatile memory device; the memory controller is configured to: determine whether data for the logical block address mapping of a received read command belongs to tables of a first class or tables of a second class, and confirm the heat of the data corresponding to the logical block address of the received read command; determine a level of the amount of drift of a threshold voltage of a memory cell corresponding to the logical block address, according to the heat of the data corresponding to the logical block address of the received read command; determine different read voltages that are correspondingly sent to the memory cell corresponding to the logical block address, according to different levels of the amount of drift.


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