The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jun. 20, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sheng-Po Huang, New Taipei, TW;

Yen-Hsiang Huang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G06F 3/06 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0673 (2013.01); G11C 7/1006 (2013.01);
Abstract

A semiconductor device includes a memory array. The memory array is configured to calculate first data and second data, and includes a first memory cell and a second memory cell. The first memory cell is configured to generate a first current signal at a first node, in response to the first data. The second memory cell is configured to generate a second current signal at the first node when the first memory cell generating the first current signal, in response to the second data. When the first data has a first data value and the second data has a second data value, the second memory cell is further configured cancel the first current signal with the second current signal. The second data value is a negative value of the first data value.


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