The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Mar. 16, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chawon Koh, Yongin-si, KR;
Tsunehiro Nishi, Suwon-si, KR;
Hyunwoo Kim, Seongnam-si, KR;
Jinkyun Lee, Incheon, KR;
Junil Kim, Suncheon-si, KR;
Hyuntaek Oh, Incheon, KR;
Jihoon Woo, Incheon, KR;
Seungsoo Choi, Incheon, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
INHA Industry Partnership Institute, Incheon, KR;
Abstract
A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.