The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Aug. 25, 2020
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Philip S. H. Chen, Bethel, CT (US);

Shawn D. Nguyen, Danbury, CT (US);

Bryan C. Hendrix, Danbury, CT (US);

Thomas H. Baum, New Fairfield, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
C23C 16/06 (2013.01); C23C 16/45553 (2013.01); H01L 21/28506 (2013.01); H01L 23/53257 (2013.01);
Abstract

Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)) or tungsten hexacarbonyl (W(CO)) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of HO is utilized. This pulsing with HO vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)-based CVD processes.


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